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Infrared ellipsometry for improved laterally resolved analysis of thin films

By K. Hinrichs, A. Furchner, G. Sun, M. Gensch, J. Rappich and T.W.H Oates

Abstract

In the present article we discuss developments towards increasingthe spatial resolution of infraredellipsometry and ellipsometric microscopy for the study of thinfilms.Relevant aspectsinthe interpretation ofobserved peaks in the infrared ellipsometric spectra are discussed. In particular anisotropic effects in dependence of molecular orientations in organic films and the excitation of a macroscopic wave, the Berreman mode, in thin silicon oxide films are addressed. For correct interpretation of measured data optical simulations are essential to avoid incorrect conclusions on band frequency and assignment

Topics: Others
Year: 2014
DOI identifier: 10.1016/j.tsf.2014.02.006
OAI identifier: oai:helmholtz.HZB:84316
Provided by: HZB Repository
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