research article
oaioai:iris.unimore.it:11380/451786

Thermal Stability of Al/AlGaAs and Al/GaAs/AlGaAs (MBE) Schottky barriers

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Publication date
1 January 1993
Publisher
Institution of Electrical Engineers:Michael Faraday House, 6 Hills Way, Stevenage Hertfordshire SG1 1AY United Kingdom:011 44 1438 313311, EMAIL: [email protected], INTERNET: http://www.iee.org, Fax: 011 44 1438 313465
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    Abstract

    Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported

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    Archivio istituzionale della ricerca - Università di Modena e Reggio Emilia

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    This paper was published in Archivio istituzionale della ricerca - Università di Modena e Reggio Emilia.

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