MOCVD of gallium oxide thin films using homoleptic gallium complexes: precursor evaluation and thin film characterisation

Abstract

This work is focused on the evaluation of different Ga(III) precursor (conventional acetylacetonates, malonates and amides) for the MOCVD of Ga2O3 thin films. In particular, the attention is devoted to a thorough comparison of the precursor qualifying properties (volatility, thermal stability under the vaporization conditions) and their interrelations with the features of the obtained deposits. Samples were grown by thermal CVD and characterized by means of a multi-technique approach (X-ray diffraction {XRD}, scanning electron microscopy {SEM}, atomic force microscopy {AFM}, energy dispersive X-ray spectroscopy {EDXS}, X-ray photoelectron spectroscopy {XPS}, Rutherford backscattering spectrometry {RBS}, spectroscopic ellipsometry {SE}) to elucidate their microstructure, morphology and chemical composition, as well as their mutual interrelations with the synthesis conditions