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Band anticrossing in GaNxSb1–x\ud

By Paul Harvey Jefferson, T. D. (Tim D.) Veal, L. F. J. Piper, B. R. Bennett, C. F. (Chris F.) McConville, B. N. Murdin, L. Buckle, G. W. Smith and T. Ashley

Abstract

Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E– and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k·p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2006
OAI identifier: oai:wrap.warwick.ac.uk:976

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