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oaioai:wrap.warwick.ac.uk:982

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

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Publication date
5 October 2005
Publisher
American Institute of Physics
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    Abstract

    The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra

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