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Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

By P. D. Quinn, Neil R. Wilson, S. A. Hatfield, C. F. (Chris F.) McConville, Gavin R. Bell, T. C. Q. Noakes, P. Bailey, S. Al-Harthi and F. Grad

Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2005
OAI identifier: oai:wrap.warwick.ac.uk:982

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