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Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys

By T. D. (Tim D.) Veal, I. Mahboob, L. F. J. Piper, C. F. (Chris F.) McConville and M. Hopkinson

Abstract

The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07<x<0.11 have been studied using x-ray photoelectron spectroscopy (XPS). In contrast to previous studies of alloys with x>=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2004
OAI identifier: oai:wrap.warwick.ac.uk:985

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