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Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

By Maksym Myranov, O. A. Mironov, Sergiy Durov, Terry E. Whall, Evan H. C. Parker, T. Hackbarth, G. Höck, H.-J. Herzog and U. König

Abstract

We have demonstrated reduced 1/f low-frequency noise in sub-µm metamorphic high Ge content p-Si0.3Ge0.7 metal–oxide–semiconductor field-effect transistors (MOSFETs) at 293 K. Three times lower normalized power spectral density (NPSD) SID/I<sub>D</sub><sup>2</sup> of drain current fluctuations over the 1–100 Hz range at VDS = –50 mV and VG–Vth = –1.5 V was measured for a 0.55 µm effective gate length p-Si0.3Ge0.7 MOSFET compared with a p-Si MOSFET. Performed quantitative analysis clearly demonstrates the importance of carrier number fluctuations and correlated mobility fluctuations (CMFs) components of 1/f noise for p-Si surface channel MOSFETs, and the absence of CMFs for p-Si0.3Ge0.7 buried channel MOSFETs. This explains the reduced NPSD for p-Si0.3Ge0.7 MOSFETs in strong inversion

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2004
OAI identifier: oai:wrap.warwick.ac.uk:986

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