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Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

By M. J. (Martin J.) Palmer, Glyn Braithwaite, T. J. Grasby, P. J. (Peter J.) Phillips, M. J. (Martin J.) Prest, Evan H. C. Parker, Terry E. Whall, C. P. Parry, A. M. Waite, A. G. R. Evans, S. (Scott) Roy, J. R. Watling, S. Kaya and A. (Asen) Asenov

Abstract

The room-temperature effective mobilities of pseudomorphic Si/Si0.64Ge0.36/Si p-metal-oxidesemiconductor field effect transistors are reported. The peak mobility in the buried SiGe channel increases with silicon cap thickness. It is argued that SiO2/Si interface roughness is a major source of scattering in these devices, which is attenuated for thicker silicon caps. It is also suggested that segregated Ge in the silicon cap interferes with the oxidation process, leading to increased SiO2/Si interface roughness in the case of thin silicon caps

Topics: TK, QC
Publisher: American Institute of Physics
Year: 2001
OAI identifier: oai:wrap.warwick.ac.uk:994

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