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Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires

By Y. S. Tang, C. D. W. Wilkinson, C. M. Sotomayor Torres, D. W. Smith, Terry E. Whall and Evan H. C. Parker

Abstract

Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low-energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron-hole droplets emission together with a new feature at 1.131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces

Topics: TK, QC
Publisher: American Institute of Physics
Year: 1993
OAI identifier: oai:wrap.warwick.ac.uk:1037

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