The work presented here describes the electrical characterization of n- and p-type strained silicon-\ud germanium systems. Theories of quantum transport in low magnetic fields at low temperature are discussed in terms of weak-localization: the traditional theory is shown not to account for the dephasing in a 2-dimensional hole gas behaving in a metallic manner and emergent alternative theories, while promising, require refinement. The mobility as a function of sheet density is measured in a p-type pseudomorphic Si0.5Ge0.5 across the temperature range 350 mK–282 K; it is shown that calculations of the mobility based on semi-classical scattering mechanisms fail below 10 K where quantum transport effects become relevant. A room temperature Hall scattering factor has been extracted. A new functional form has been presented to fit the resistivity as a function of temperature, below 20 K: traditional theories of screening and weak localization appear not to be applicable. It is also demonstrated that simple protection circuitry is essential if commercial-scale devices are to be meaningfully investigated. Mobility spectrum analysis is performed on an n-type strained-silicon device. Established analysis methods are discussed and a new method is presented based on the Bryan’s Algorithm approach to maximum entropy. The breakdown of the QHE is also investigated: the critical current density compares well to that predicted by an existing theory. Finally, devices in which both electron and hole gases can be induced are investigated. However, it is shown that the two carrier species never co-exist. Design rules are presented which may allow more successful structures to be created. Results are presented which demonstrate the success and the utility of implanted contacts which selectively reach different regions of the structure
To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.