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Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications

By Jihperng Leu, H.E. Tu, W.Y. Chang, C.Y. Chang, Y.C. Chen, W.C. Chen and H.Y. Zhou

Abstract

Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages

Topics: silicon carbonitride, low-k, etch-stop, diffusion barrier, ddc:620, Siliciumcarbonitrid, Silicium, Low-k-Dielektrikum, Diffusionsbarriere
Publisher: Universitätsbibliothek Chemnitz
Year: 2016
OAI identifier: oai:qucosa.de:bsz:ch1-qucosa-207243

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