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Optical Properties of Sputtered Tantalum Nitride Films Determined by Spectroscopic Ellipsometry

By Thomas Waechtler, Bernd Gruska, Sven Zimmermann, Stefan E. Schulz and Thomas Gessner

Abstract

Tantalum and tantalum nitride thin films are routinely applied as diffusion barriers in state-of-the-art metallization systems of microelectronic devices. In this work, such films were prepared by reactive magnetron sputtering on silicon and oxidized silicon substrates and studied by spectroscopic ellipsometry in the spectral range from 190 nm to 2.55 μm. The complex refractive index for thick films (75 to 380 nm) was modeled using a Lorentz-Drude approach. These models were applied to film stacks of 20 nm TaN / 20 nm Ta on unoxidized and thermally oxidized Si. With free oscillator parameters, accurate values of the film thicknesses were obtained according to cross-sectional scanning electron microscope (SEM) measurements. At the same time, a strong variation of the optical properties with film thickness and substrate was observed

Topics: Tantalnitrid, ddc:620, Diffusionsbarriere, Dünne Schicht, Ellipsometrie, Magnetronsputtern, Metallisieren, Mikroelektronik, Optische Eigenschaft, Tantal
Publisher: Universitätsbibliothek Chemnitz
Year: 2006
OAI identifier: oai:qucosa.de:swb:ch1-200600325

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