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Physical Review B

By A. Ferreira da Silva

Abstract

p. 1921-1923In light of recent measurements of the transport properties in compensated semiconductor systems, we report a calculation for the low-temperature dc electrical conductivity of the systems Si:P and Ge:Sb as a function of concentration and compensation. The effects of disorder are taken into account in the calculation. With increasing compensation the conductivity follows the trend of the experimental results. For uncompensated systems the results agree fairly well with experiments

Publisher: Physical Review B
Year: 1993
OAI identifier: oai:agregador.ibict.br.RI_UFBA:oai:192.168.11:11:ri/13173
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