This is a conference paper.A system that combines the advantages of fast global electroluminescence (EL) measure-ments and highly detailed spectral EL meas-urements is presented. A Si camera-based EL system is used to measure the intensity of radi-ative recombination of the PV device spatially resolved over its full area. A monochromator-based system is then used to measure local-ised emission spectra at specific points of interest identified, as such as defects and cracks. The first measurement results of a mc-Si and an a-Si PV device show good agreement with reported behaviour of such devices and high-light the potential to distinguish between differ-ent defect types and reveal performance changes that would be missed using camera-based EL only
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