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BroadbandInGaAsquantumdot-in-a-wellsolarcellsofp-typewells

By T.E. Tzeng, K.Y.Chuang, T.S.Lay and C.H.Chang

Abstract

BroadbandInxGa1 xAs quantumdot-in-a-well(DWell)solarcellsaregrownbystackinglayersofcomposition-tailoredInxGa1 xAs (x¼1, 0.75,and0.65)quantumdotsonp-typeIn0.1Ga0.9As quantumwells (QWs).DopingconcentrationandgrowthtemperaturefortheBe-dopedquantumwellsareoptimizedtoenhancetheconversionefficiency(Z). ThebroadbandDWellsolarcellofBe:2 1017 cm 3 QWs grownat570 1C showsthebestphotovoltaiccharacteristicsof Z¼10.86%,whichis 3%higherthanthatoftheGaAsbaselinesolarcell

Topics: A3. Molecularbeamepitaxy, A3. Quantumdots, B1. InGaAs, B3. Solarcells
Year: 2014
OAI identifier: oai:ir.lib.nchu.edu.tw:11455/84732
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