BroadbandInGaAsquantumdot-in-a-wellsolarcellsofp-typewells

T.E. Tzeng; K.Y.Chuang; T.S.Lay; C.H.Chang

oai:ir.lib.nchu.edu.tw:11455/84732

BroadbandInGaAsquantumdot-in-a-wellsolarcellsofp-typewells

Authors: T.E. Tzeng
K.Y.Chuang
T.S.Lay
C.H.Chang
Publication date: 19 November 2014
Publisher

Abstract

BroadbandInxGa1 xAs quantumdot-in-a-well(DWell)solarcellsaregrownbystackinglayersofcomposition-tailoredInxGa1 xAs (x¼1, 0.75,and0.65)quantumdotsonp-typeIn0.1Ga0.9As quantumwells (QWs).DopingconcentrationandgrowthtemperaturefortheBe-dopedquantumwellsareoptimizedtoenhancetheconversionefficiency(Z). ThebroadbandDWellsolarcellofBe:2 1017 cm 3 QWs grownat570 1C showsthebestphotovoltaiccharacteristicsof Z¼10.86%,whichis 3%higherthanthatoftheGaAsbaselinesolarcell

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Last time updated on 16/06/2016

This paper was published in National Chung Hsing University Institutional Repository.

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