FORMATION OF ION-ALLOYED AND THIN-FILM STRUCTURES FOR MICROWAVE TRANSISTORS AND MICROCIRCUITS

Abstract

The work covers the MDS and MDM-structures, semiconductor bases - germanium, silicon, gallium arsenide and also specimens with ion-alloyed layers. The aim is to develop the control methods of structure and properties in the layer microelectronic systems with use of the ion beams and pulse laser beams and to develop the improved technology of forming ion-alloyed structures for the microwave transistors and microcircuits. A possibility to control the properties of the dielectric films and boundaries at laser radiation has been shown. The role of the own oxides at ionic implantation and laser annealing has been revealed. A possibility to forecast the parameters of the field-effect Shottky transistor (FEST) with ion-alloyed layers on the gallium arsenide has been shown. The methods stabilizing the surface of the gallium arsenide, silicon and germanium transistor structures with application of the ionic implantation and pulse laser processing, method increasing the electric strength of the thin-film designs of FEST and also the FEST with ion-alloyed layers on the gallium arsenide with parameters: noise factor 1 dB and power gain 10 dB (frequency 12 GHz) have been developed. The improved technology has been introduced into the batch production. The parameters of germanium planar transistors GT-346 and also the parameters of microwave field effect Shottky transistors on the gallium arsenide have been improved. Application field: turret tuners, satellite communication and radiolocation systems, equipment for astrophysical investigations, production process of microwave transistors and microcircuitsAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio