The phenomenological theory of the initial stage of the before-stoichiometric ion synthesis of the new phase in silicone

Abstract

The object of investigation: the materials of microelectronics. The purpose of the work: the development of theory of the before-stoichiometric ion synthesis of structures "silicone-on-insulator" and optimization of the ion synthesis process on the base of the developed theory. The theory of the ion synthesis of the sealed dielectric layer in silicone has been developed. The possibility of the ion synthesis on the before-stoichiometric ion doses at combining the ions implantation with the short-time silicone annealing has been proved. The optimum conditions of the ion synthesis of the SOI-structures allowing to receive the structure of good quality with the significant reduction of doses of oxygen or nitrogen ions to be implanted in silicone, and the temperature of annealing, have been determinedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio