INVESTIGATION OF SINGLE-STAGE LOW-TEMPERATURE PROCESSES OF FORMING SILICIDE CONTACT AND NITRIDE BARRIER LAYERS FOR MICROELECTRONICS TECHNOLOGY

Abstract

The work has been devoted to the complex investigation of the phase formation and growth kinetics processes of the thin films of the two-component compounds (silicides and nitrides) with given properties at deposition from molecular beams and development of the single-stage low-temperature processes of forming silicide and nitride films for the contact and barrier layers and local intercompounds in the silicon integrated circuits. The crystallization processes of the thin silicide firms at quasi-layer growth from molecular beams have been investigated. The new phenomenological model for phase formation of the silicide layers has been proposed. The special features of forming silicides at growth from molecular beams have been discovered and investigated. The single-stage of forming structural- and phase-different silicide layers has been proposed and investigated. The new low-temperature technology of forming silicide contacts to the small p-n transitions has been developed. The processes of forming low-ohmic nitride layers and multilayer structures have been investigatedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio