Electrical break-down and switching of conductivity with memory in structures with oxides of rare-earth elements

Abstract

The complex investigation of the electrical break-down and switching effect of conductivity with memory in films of rare-earth element oxides has been held in the paper for the first time. The quantitative model of the electrical dreak-down preparation has been developed. Data about electrophysical parameters and characteristics of structures with film oxides of rare-earth elements, which are important in the practical elaboration of some devices, have been obtained. The element of the constant re-programmed memory has been developed. The positive solution about the copyright has been obtained for this element. The paper results may find their field of application in development, design and production of thin-film condensers, elements of constant reprogrammed memoryAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio