The paper is concerned with an ion-implant, amorphous and polycrystalline silicon. The aim is to investigate the structural disorder effects by a light Raman scattering spectroscopy method at ion implantation of silicon and its annealing during following treatments. The photo-induced crystallization at ion implantation has been investigated. The detection and interpretation of behaviour difference in disordered silicon at repeated implantation by ions in dependence upon the conductivity type and concentration of carriers have been performed. The application possibility of light Raman scattering spectroscopy for investigation of the ion-beam annealing of silicon amorphousized by a silicon implantation has been groundedAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio
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