Particular features of heating dynamics and process modelling of nanosecond impulse laser irradiation of semiconductors in regimes of developed melting

Abstract

Monocrystalline silicon and germanium and their melts are considered in the paper aiming at the particular feature investigation of the laser radiation interaction with melts, the character investigation of the temperature behaviour of optical and thermal physical parameters of melts. The modelling of the material melting dynamics in the irradiation regimes considered is also the aim of the paper. As a result on the base of the theoretical analysis the deduction about the weak influence of surface periodical structures, detected in experiments, on results of the optical sounding and dynamics of heating and melting of semiconductors has been represented. Investigations of the growth dynamics on the melt surface of periodical surface structures, their time and space characteristics have been held. The method of the melt physical property determination in a wide temperature range has been suggested and substantiated. The paper results may find their field of application in impulse laser modification of semiconductor propertiesAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio