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Fabrication and characterization of p-MOSFETS with a strained SiGe channel

By Urs Norman Straube

Abstract

SIGLEAvailable from British Library Document Supply Centre- DSC:DXN061555 / BLDSC - British Library Document Supply CentreGBUnited Kingdo

Topics: 09B - Circuits, 09A - Components, 09C - Electronic devices, electromechanical devices, HETEROSTRUCTURES, ELECTRONIC DEVICES
Publisher: Southampton (United Kingdom) : University of Southampton
Year: 2002
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Provided by: OpenGrey Repository
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