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Flicker noise of hot electrons in silicon at T = 78 K

By G. Bosman, R.J.J. Zijlstra and A. van Rheenen

Abstract

From flicker-noise and current-voltage measurements performed on an n+nn+ silicon planar device at T = 78 K we calculated Hooge's parameter α as a function of the electric field strength, E0. We found that α(E0) = α(0)/[1 + (E0/Ec)2]. Ec is a critical field where the drift velocity equals the sound velocity, indicating the connection of the observed effect with acoustical phonon scattering

Topics: Natuur- en Sterrenkunde
Year: 1980
OAI identifier: oai:dspace.library.uu.nl:1874/24327
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