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thesis
oaioai:dspace.lib.ntua.gr:123456789/31142

Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

Authors
  1. P Normand
  2. P Dimitrakis
  3. E Kapetanakis
  4. D Skarlatos
  5. K Beltsios
  6. D Tsoukalas
  7. C Bonafos
  8. H Coffin
  9. G Benassayag
  10. A Claverie
  11. V Soncini
  12. A Agarwal
  13. Ch Sohl
  14. M Ameen
Publication date
1 January 2004
Publisher
Doi

    Abstract

    Abstract is not available.
    • Ion beam synthesis
    • Nanocrystal memory
    • Non-volatile memory
    • Silicon implantation
    • Silicon nanocrystals
    • Ion beams
    • Ion implantation
    • MOS capacitors
    • Nonvolatile storage
    • Plasma applications
    • PROM
    • Semiconducting silicon
    • Threshold voltage
    • Prototype devices
    • Nanostructured materials
    • Ion beam synthesis
    • Nanocrystal memory
    • Non-volatile memory
    • Silicon implantation
    • Silicon nanocrystals
    • Ion beams
    • Ion implantation
    • MOS capacitors
    • Nonvolatile storage
    • Plasma applications
    • PROM
    • Semiconducting silicon
    • Threshold voltage
    • Ion beam synthesis
    • Nanocrystal memory
    • Prototype devices
    • Silicon nanocrystals
    • Nanostructured materials

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    Last time updated on 03/06/2016

    This paper was published in DSpace@NTUA (National Technical Univ. of Athens).

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