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Structural characterisation of MBE grown zinc-blende \ud Ga1-xMnxN/GaAs(001) as a function of Ga flux

By Y. Han, Mike W. Fay, Paul D. Brown, Sergei V. Novikov, K.W. Edmonds, B.L. Gallagher, R.P. Campion and C.T. Foxon

Abstract

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer

Publisher: Springer-Verlag
Year: 2005
OAI identifier: oai:eprints.nottingham.ac.uk:1470
Provided by: Nottingham ePrints

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