text
oaioai:corescholar.libraries.wright.edu:physics-1664

Properties of Aℓ and P Ion-Implanted Layers in ZnSe

Authors
Publication date
1 January 1975
Publisher
CORE Scholar
Doi

    Abstract

    Low-resistivity n- and p-type layers have been produced in ZnSe by room-temperature Aℓ and P implantation, respectively, and subsequent annealing. The layers have been characterized by electrical and photoluminescence measurements as functions of ion energy and dose, and annealing time and temperature

    Similar works

    Full text

    thumbnail-image

    CORE

    redirect
    oaioai:corescholar.libraries.wrig...
    Last time updated on 26/05/2016

    This paper was published in CORE.

    Having an issue?

    Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.