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A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications

By Y Tan, M Kumar, JKO Sin, LX Shi and J Lau

Abstract

This paper presents a silicon-on-insulator (SOI) fully integrated RF power amplifier for single-chip wireless transceiver applications. The integrated power amplifier (IPA) operates at 900 MHz, and is designed and fabricated using a 1.5-mu m SOI LDMOS/CMOS/BJT technology. This technology is suitable for the complete integration of the front-end circuits with the baseband circuits for low-cost low-power high-volume production of single-chip transceivers. The IPA is a two-stage Class E power amplifier. It is fabricated along with the on-chip input and output matching networks, Thus, no external components are needed. At 900 MHz and with a 5-V supply, the power amplifier delivers 23-dBm output power to a 50-Omega load with 16-dB gain and 49\% power-added efficiency

Topics: Class E power amplifier, Integrated power amplifier, LDMOS transistor, RFIC, SOI, Wireless transceiver
Year: 2000
DOI identifier: 10.1109/4.871326
OAI identifier: oai:repository.ust.hk:1783.1-24515
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