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A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect

By D. Logoteta, M. G. Pala, J. Choukroun, P. Dollfus and G. Iannaccone

Abstract

We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high ION/IOFF ratios, compatible with electronic applications, albeit biased at ultralow voltages of around 0.1 V.Comment: 4 pages, 5 figure

Topics: Condensed Matter - Mesoscale and Nanoscale Physics
Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'
Year: 2020
DOI identifier: 10.1109/LED.2019.2928131
OAI identifier: oai:arXiv.org:2002.07300

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