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Polariton lasing due to the exciton-electron scattering in semiconductor microcavities

By G. Malpuech, A. Kavokin, A. Di Carlo, J.J. Baumberg, F. Compagnone, P. Lugli and M. Zamfirescu

Abstract

The issue of polariton lasing in n-doped microcavities is addressed. We show theoretically that the introduction of a cold electron gas into quantum microcavities induces efficient electron–polariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light emitting device

Topics: QC
Year: 2002
OAI identifier: oai:eprints.soton.ac.uk:14640
Provided by: e-Prints Soton

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Citations

  1. (1995). Vertical Surface Emitting Lasers, doi

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