Polariton lasing due to the exciton-electron scattering in semiconductor microcavities

Abstract

The issue of polariton lasing in n-doped microcavities is addressed. We show theoretically that the introduction of a cold electron gas into quantum microcavities induces efficient electron–polariton scattering. This process allows the condensation of the polaritons accumulated at the bottleneck to the final emitting state with a transition time of a few picoseconds, opening the way to a new generation of low-threshold light emitting device