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Growth, structuring and interface manipulation of ultrathin oxide and silicate films on silicon single crystal surfaces

By Shariful Islam


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Topics: Gate dielectric, dielectric constant, stoichiometry, leakage current, hygroscopic, crystalline, flat band voltage, hysteresis, barium silicates (Ba2SiO4), Gatedielektrikum, Dielektrizitätskonstante, Stöchiometrie, Leckstrom, hygroskopisch, kristallin, Flachbandspannung, Hysterese, Barium-Silikate, info:eu-repo/classification/ddc/530, Physik
Publisher: Gottfried Wilhelm Leibniz Universität Hannover
Year: 2015
DOI identifier: 10.15488/8483
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