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Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM Using an Oxygen-Blocking Layer

By Alexander Schoenhals, Andreas Kindsmüller, Camilla La Torre, Hehe Zhang, Susanne Hoffmann-Eifert, Stephan Menzel, Rainer Waser and Dirk J. Wouters
Publisher: 'Institute of Electrical and Electronics Engineers (IEEE)'
Year: 2017
DOI identifier: 10.1109/IMW.2017.7939096
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Provided by: RWTH Publications
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