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Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation

By B. Fischer, L. Selmi, A. Ghetti and E. Sangiorgi

Abstract

Measured electron injection probabilities (PJN) into to the gate oxide of MOS structures [1] are presented for both liquid nitrogen and room temperature. For the first time PJN has been measured for total voltage drops (VTOT) in the substrate spanning from well below to well above the value corresponding to the Si-SiO2 barrier height (V*TOT=ΦB/q=3.15 V). In contrast to MOSFET data [2], here two different injection regimes can clearly be distinguished. For VTOT < V*TOT a regime occurs in which injection is no longer caused only by the electron energy gained in the electric field but also by the additional energy from phonon absorption. No lucky electron model holds true in this regime and therefore some insight will be given here by means of Monte Carlo simulations of the injection experiment. A simple analysis technique is developed, that explains the observed temperature dependence and injection regimes of PJN

Publisher: EDP Sciences
Year: 1996
DOI identifier: 10.1051/jp4:1996303
OAI identifier: oai:edpsciences.org:dkey/10.1051/jp4:1996303
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