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Plasma and Transit-Time Effects on Electronic Noise in Semiconductor n+nn+ Structures

By L. Reggiani, P. Golinelli, E. Faucher, L. Varani, T. Gonzalez and D. Pardo

Abstract

International audienc

Topics: [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], [SPI.TRON]Engineering Sciences [physics]/Electronics
Publisher: World Scientific
Year: 1995
DOI identifier: 10.1142/2764
OAI identifier: oai:HAL:hal-02433777v1
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