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Study of Ni/Al Interface Diffusion by Molecular Dynamics Simulation

By Hao Wang, Chunguang Zhang and Yishen Qiu

Abstract

Molecular dynamics simulation of Ni/Al interface diffusion is carried out by Embedded Atom Method (EAM) potential. The problem how the temperature affects Ni/Al interface diffusion is discussed. The initial dynamic behavior of Ni/Al interface diffusion at high temperature is shown. The study in this letter is helpful to understand the origin of diffusion phenomenon

Topics: Molecular Dynamics Simulation, Interface Diffusion, EAM Potential, LCC:Engineering (General). Civil engineering (General), LCC:TA1-2040, LCC:Technology, LCC:T, DOAJ:General and Civil Engineering, DOAJ:Technology and Engineering
Publisher: Scientific Research Publishing
Year: 2011
DOI identifier: 10.4236/eng.2011.33026
OAI identifier: oai:doaj.org/article:9928d8baa429415db856a96481760b3b
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