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Index Terms—Single-Photon Avalanche Diode, Deepsubmicron

By Mohammad Azim Karami, Hyung-june Yoon and Edoardo Charbon

Abstract

Abstract — Single-photon avalanche diodes (SPADs) are evaluated in two sub-100nm CMOS technologies. Several geometries are implemented, whereas premature edge breakdown (PEB) prevention is achieved with n-well rings. The octagonal SPADs are implemented in 90nm and 65nm standard CMOS technologies. Full characterization of SPAD performance is carried out as a function of bias and temperature. To the best of our knowledge, this is the first report of SPAD in any 65nm CMOS technology

Topics: A
Year: 2014
OAI identifier: oai:CiteSeerX.psu:10.1.1.418.2192
Provided by: CiteSeerX
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