Abstract: Recently, there has been a revolution in the world of microwave, and Gunn diode oscillators have found many applications and are also heavily applied in research and development in laboratories. These devices are often referred to as an oscillator with low and medium power and are used in microwave receivers.This paper introduces X-band oscillator Gunn diodes and discusses the design and implementation steps that are taken into consideration. The local oscillator of X band, sweeps 8.5 to 9.4 GHz frequency range with a short circuit plate movement across the cavity. Furthermore, change in aperture diameter of diaphragm to achieve maximum output power is examined. We observe that the change in aperture diameter of 8 to 9 mm, leads to 15mW more output power to the amount that can be accounted as outstanding. To prevent damage to the diode, due to current fluctuations of a metal, applying a metal nut with high capacity is also investigated. Phase noise measuring, frequency stability with temperature and time and the second harmonic excitation are also the cases that have been studied. In order to protect Gunn diode in different biases a protection circuit has been designed
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