Abstract:- In this work CdSe thin films were grown by chemical bath deposition (CBD) 6 onto glass substrate with approximately 2000 Å thickness. The samples have been prepared by changing the volume concentration of the solution in the range of 5-45 ml. of Se, the other growth parameter such as reactive concentration an stirring remained constant during the growth process. The volume of the solution of Se was varied in order to perform the crystalline phase transformation from cubic zincblende (ZB) to the hexagonal wurtzite (W) structure. The change in the crystalline structure and electrical properties were noticeable, whereas the growth volume concentration was increased. The characterization of the samples included optical absorption, X ray diffraction, reflectivity electronic dispersive spectroscopy and dark electrical conductivity analyses. The optical absorption spectra allowed to calculate the energy band-gap (Eg) value and, hence, the evolution of Eg through the transformation from the cubic crystalline phase to the hexagonal phase. The X ray diffraction spectra also showed the complete microstructural transformation from cubic samples up to the entire hexagonal lattice for samples with higher volume of the solution of Se. Key-Words:- Chemical bath, CdSe, thin films, phase transitions, semiconductors
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