Low temperature fabrication of integrated circuit (IC) devices is important for large-area electronics and 3-D integration with CMOS electronics. This work addresses novel processes and transistor structures for these applications. Polycrystalline silicon thin film transistors (poly-Si TFTs) are the highest performing devices for flat panel displays such as active matrix liquid crystal displays. Though the poly-Si TFT market share in the flat panel display industry is growing, realizing systemon-panel (SOP) products with all electronic circuitry directly fabricated on the display substrate requires improved device uniformity and reliability. Two new processes are investigated to improve the performance, uniformity and reliability of poly-Si TFTs. The first is an ultra-low-temperature ultraviolet (UV) oxidation process with a maximum substrate temperature of 150◦C developed for fabrication of poly-Si TFTs on flexible substrates. The UV oxide interfacial layer with a gate oxide deposited by PECVD shows excellent gate oxide characteristics for poly-Si TFT technology. Next, a defect passivation technique by selenium ion implantation into the TFT channel is shown to successfully passivate defects and improve TFT reliability under hot carrier bias conditions
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