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A rapid-doping method for high-throughput discovery applied to thick- film PTCR materials

By Yulong Chen, Julian RG Evans and Shoufeng Yang

Abstract

A novel high-throughput combinatorial library preparation technique for ceramics requiring low levels of dopant is demonstrated and assessed for the case of donor-doped barium titanate (BT) materials with positive temperature coefficient of resistance (PTCR) materials. The droplet-doping process is performed by infiltrating liquid dopant precursors into porous BT disks and viewed by high speed camera. The resulting dopant distribution in the body of the disk shows high uniformity as assessed by energy dispersive (EDS) and wavelength dispersive (WDS) spectroscopies. X-ray diffraction (XRD) measurements and resistivity-temperature (?-T) curves show evidence of the changes in structure and PTCR profiles with change in composition and are closely matched to previously published data for samples made by conventional ceramic routes. The procedure, thus validated, has the potential to deliver dopant-doped BT-based PTCR libraries rapidly with a very wide range of dopant mixtures and concentrations for electrical property measurement and deserves to be applied to other low level dopant ceramic systems

Topics: TA, TP
Year: 2011
OAI identifier: oai:eprints.soton.ac.uk:187435
Provided by: e-Prints Soton
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