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Growth of Oxide Compounds under Dynamic Atmosphere Composition

By D. Klimm, S. Ganschow, D. Schulz, R. Bertram, R. Uecker, P. Reiche and R. Fornari


Commercially available gases contain residual impurities leading to a background oxygen partial pressure of typically several 10 −6 bar, independent of temperature. This oxygen partial pressure is inappropriate for the growth of some single crystals where the desired oxidation state possesses a narrow stability field. Equilibrium thermodynamic calculations allow the determination of dynamic atmosphere compositions yielding such self adjusting and temperature dependent oxygen partial pressures, that crystals like ZnO, Ga2O3, or Fe1−xO can be grown from the melt

Topics: Key words, A1 phase equilibria, A2 growth from melt, B1 oxides
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