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Laterally-doped heterostructures for III-N lasing devices

By S. M. Komirenko, K. W. Kim, V. A. Kochelap and J. M. Zavada

Abstract

To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p − i − n structure that can be created in selectively-doped superlattices and quantum wells. The 2D p − i − n structure is formed in the quantum well layers due to efficient activation of donors and acceptors in the laterally doped barriers. We show that strongly non-equilibrium 2D electron-hole plasma with density above 10 12 cm −2 can be realized in the i−region of the laterally biased p−i−n structure, enabling the formation of interband population inversion and stimulated emission from such a LAteral Current pumped Emitter (LACE). We suggest that implementation of the lateral p −i−n structures provides an efficient way of utilizing potential-profile-enhanced doping of superlattices and quantum wells for electric pumping of nitride-based lasers. 1 Currently AlGaN and InAlGaN based heterostructures are of great interest for shortwavelength optoelectronic devices, i.e., light-emitting diodes (LEDs), laser diodes (LDs) an

Year: 2002
OAI identifier: oai:CiteSeerX.psu:10.1.1.311.8583
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