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Magnetic properties of a-Si films doped with rare-earth elements

By M. S. Sercheli, C. Rettori and A. R. Zanatta


Amorphous silicon films doped with Y, La, Gd, Er, and Lu rare-earth elements (a-Si:RE) have been prepared by co-sputtering and studied by means of electron spin resonance (ESR), dc-magnetization, ion beam analysis, optical transmission, and Raman spectroscopy. For comparison the magnetic properties of laser-crystallized and hydrogenated a-Si:RE films were also studied. It was found that the rare-earth species are incorporated in the a-Si:RE films in the RE3+ form and that the RE-doping depletes the neutral dangling bonds (D0) density. The reduction of D0 density is significantly larger for the magnetic REs (Gd3+ and Er3+) than for the non-magnetic ones (Y3+, La3+, Lu3+). These results are interpreted in terms of a strong exchange-like interaction, JRE−DBSRESDB, between the spin of the magnetic REs and that of the D0. All our Gd-doped Si films showed basically the same broad ESR Gd 3+ resonance (∆Hpp ≈ 850 Oe) at g ≈ 2.01, suggesting the formation of a rather stable RE-Si complex in these films. 75.70.-i, 76.30.Kg, 78.66.Jg 1 I

Year: 2002
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