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Development of Active Pixel Photodiode Sensors for Gamma Camera Application

By Nur Sultan Salahuddin, Michel Paindavoine, Brahmantyo Heruseto and Michel Parmentier

Abstract

We designed new photodiodes sensors including current mirror amplifiers. These photodiodes have been fabricated using a CMOS 0.6 micrometers process from Austria Micro System (AMS). The Photodiode areas are respectiveley 1mm x 1mm and 0.4mm x 0.4mm with fill factor 98 % and total chip area is 2 square millimetres. The sensor pixels show a logarithmic response in illumination and are capable of detecting very low blue light (less than 0.5 lux) . These results allow to use our sensor in new Gamma Camera solid-state concept

Topics: Computer Science - Other Computer Science
Year: 2011
OAI identifier: oai:arXiv.org:1105.1412
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