Article thumbnail

Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices

By Malika Elharizi, Fadi ZAKI, Ali Ibrahim, Zoubir KHATIR and Jean Pierre OUSTEN

Abstract

GaN-based power components are known to exhibit reversible instabilities in their electrical characteristics, particularly in the threshold voltage and in the on-state resistance. This is due to trap effects in the structure. Works presented in this paper attempt to answer the question of how are these traps affected during aging by power cycling and especially if there is irreversible degradation. For this purpose, power cycling tests were performed using 80?K of junction temperature swing on Normally-ON Al2O3/AlGaN/GaN MOS-HEMTs power chips reported on a direct copper bonding (DCB) substrate. The aging has been regularly interrupted in order to perform characterization of several aging indicators. Furthermore, trap characterizations, based on the analyses of transient current measurements, have been carried out during the aging process. The results show that irreversible degradation affects threshold voltage with drift to negative values for all tested samples. These drifts were mainly attributed to cumulative trapping with power cycles, probably induced by hot electrons, in a progressive and non-recoverable way

Topics: GAN DEVICE, POWER CYCLING, TRAPPING, ELECTRICAL DEGRADATION, FIABILITE, [SPI.NRJ]Engineering Sciences [physics]/Electric power
Publisher: 'Elsevier BV'
Year: 2018
DOI identifier: 10.1016/j.microrel.2018.07.070
OAI identifier: oai:HAL:hal-02093634v1
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • https://hal.archives-ouvertes.... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.