Avalanche photodetectors are important for imaging applications because of their high sensitivity and low noise levels. For imaging applications, however, a two-dimensional array of APDs is required, and there are many fabrication issues involved in making such an array over a large area. In this work, fabrication and characterization of 32 × 32 arrays of InP (indium phosphide) based separated absorption, charge, and multiplication avalanche photodetectors (SACM APDs) is pursued to address the fabrication issues associated with making a high density array of APDs over a large area. Dark current and photocurrent uniformity of the array are characterized. Leakage current is also analyzed in terms of dark current and cross-talk by examining APDs with different mesa diameters and different separations, respectively. For these results, we find that the dark current of SACM APD devices mainly comes from the junction leakage. Thus, to reduce the dark current we need to improve the design of the epitaxial layers. This work also examines the dependence of cross-talk and the array packing density. A trade-off relationshi
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