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Systematic Transistor and Inductor Modeling for Millimeter-Wave Design

By Chuankang Liang, Student Member and Behzad Razavi

Abstract

Abstract—This paper proposes a simulation-based modeling methodology that provides greater flexibility in the design and layout of millimeter-wave CMOS circuits than measurementbased models do. A physical model for the metallization capacitances of the transistors is described and new layout techniques are introduced that exploit these capacitances to improve the circuit performance. The accuracy of the models is verified by the design and measurement of five oscillators operating in the range of 40 GHz to 130 GHz in 90-nm CMOS technology. Index Terms—High-frequency MOS models, inductor models, interconnect models, millimeter-wave circuit design, millimeterwave layout techniques, MOS device capacitances. Fig. 1. Generic transceiver front end

Year: 2010
OAI identifier: oai:CiteSeerX.psu:10.1.1.152.35
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