Skip to main content
Article thumbnail
Location of Repository

© (2007) Trans Tech Publications, Switzerland Modeling and Simulation of Carbon Nanotube Interconnect Network

By Chen Dong, Wei Wang and Maher Rizkalla


Abstract. The electrical properties of metallic carbon nanotubes (CNT) can rival, or even exceed, the best metals known. It is a potential candidate for future on-chip interconnect, whose performance will be dominant in the next generation integrated circuits. In this paper, a study on the modeling and simulation techniques for the CNT interconnect network is carried out. The frequency-independent models of CNT interconnects in terms of resistance, inductance and capacitance are summarized. A novel frequencydependent circuit model is proposed for CNT for various high-frequency applications. Preliminary analysis shows a good match between numerical simulations and the compact model. The proposed modeling and simulation techniques for CNT interconnect network are expected to play an important role in the future CNT nanotechnology applications

Topics: carbon nanotube, interconnects, simulation, model, frequency-dependent
Year: 2009
OAI identifier: oai:CiteSeerX.psu:
Provided by: CiteSeerX
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • (external link)
  • (external link)
  • Suggested articles

    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.