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Quantum capture times at room temperature in high speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers

By David Klotzkin, Kishore Kamath and Pallab Bhattacharya


Abstract — The quantum capture times in high-speed singlemode self-organized quantum-dot (QD) lasers with s� � a 15–30 mA, and small-signal modulation bandwidth �0Q�f a 4.5 GHz, have been estimated from high frequency electrical impedance measurements. The effective carrier capture times, determined from this relatively simple measurement technique, vary in the range of 20–40 ps, depending on bias current, and are in excellent agreement with theoretical predictions. The results suggest that carrier capture, not damping, may prove to be the limiting factor in the modulation bandwidths of QD lasers. Index Terms—Modulation bandwidth, semiconducotr lasers. SELF-ASSEMBLED InGaAs–GaAs quantum-dot (QD) lasers have recently demonstrated impressive performance at room temperature [1]–[3]. All the work to date has focused on improvement of materials growth and characterization o

Year: 1997
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