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Asenov A. The impact of random doping effects on CMOS SRAM cell. In: Proceeding of the 30th European solid-state circuits conference (ESSCIRC

By B. Cheng, S. Roy and A. Asenov

Abstract

SRAM has very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale M0SFET.s. Using a statistical circuit simula!ion methodology which can fully collate intrinsic parameter fluctuation information into compact model sets, the impact of random device doping on 6-T SRAM static noise margins, read and write characteristics are investigated in detail for well-scaled 35 nm physical gate length devices. We conclude that intrinsic parameter fluctuations will become a major limilafion to further conventional MOSFET SRAMscaling. 1

Year: 2004
OAI identifier: oai:CiteSeerX.psu:10.1.1.134.3932
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