SRAM has very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale M0SFET.s. Using a statistical circuit simula!ion methodology which can fully collate intrinsic parameter fluctuation information into compact model sets, the impact of random device doping on 6-T SRAM static noise margins, read and write characteristics are investigated in detail for well-scaled 35 nm physical gate length devices. We conclude that intrinsic parameter fluctuations will become a major limilafion to further conventional MOSFET SRAMscaling. 1
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