Platinum silicide Schottky barrier detectors (SBD) and GeSi/Si-based heterojunction internal photoemission (HIP) detectors are widely used for application in the infrared spectral range. The increase in cutoff wavelength and responsivity of PtSi/Si photodevices is possible by formation of heavily-doped thin layer near to the semiconductor surface. The cutoff wavelength of Ge xSi 1–x/Si-based HIPdetectors depends on x and concentration of boron in GeSi. In this report, the threshold properties of these detectors are considered. The dependencies of spectral detectivities and NETD on cutoff wavelength are calculated for various parameters of SBD and HIP detectors. It is shown that optimal NETD of a SBD and HIP detectors is possible for certain cutoff wavelength and temperature of detectors and depends on storage capacity. Also opportunity of formation of heavily-doped nanolayer in SBD detectors used by short-pulse recoil implantation of boron was studied. Keywords: PtSi/Si barrier, heavily-doped nanolayers, SBD detectors, HIP detectors, GeSi/Si heterojunctions. 1
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